Corsair CML16GX3M2A1600C10 8GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 101

左右 59% 更低的延时
更快的读取速度，GB/s

13.9 12.1

测试中的平均数值
更快的写入速度，GB/s

8.5 6.7

测试中的平均数值

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

需要考虑的原因
InnoDisk Corporation M4C0-AGS1TCSJ 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 101
读取速度，GB/s

13.9 12.1
写入速度，GB/s

8.5 6.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2385 1382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA851U6CJR6N-UH 4GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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SK Hynix HMT41GS6MFR8A-PB 8GB

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Kingston KF3200C16D4/32GX 32GB

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Kingston 99U5474-038.A00LF 4GB

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Corsair CM4X8GF2400C16S4 8GB

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AMD R538G1601U2S-UO 8GB

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Samsung M378A1G43DB0-CPB 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

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SK Hynix HMA84GR7MFR4N-TF 32GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB