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Corsair CML8GX3M2A1600C9 4GB
Super Talent F24EB8GS 8GB

Corsair CML8GX3M2A1600C9 4GB vs Super Talent F24EB8GS 8GB

总分
star star star star star
Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分
star star star star star
Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB

差异 规格 评论

差异

Corsair CML8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
Super Talent F24EB8GS 8GB 需要考虑的原因
Super Talent F24EB8GS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 39
    左右 -26% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Super Talent F24EB8GS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 31
  • 读取速度，GB/s
    14.6 left arrow 16.2
  • 写入速度，GB/s
    8.8 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 13 14 15 16 17
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2355 left arrow 3017

Corsair CML8GX3M2A1600C9 4GB RAM的比较

G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Super Talent F24EB8GS 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Essencore Limited IM48GU88N26-FFFHMZ 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Ramaxel Technology RMUA5110ME78HAF-2666 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Super Talent F24EB8GS 8GB
Super Talent F24EB8GS 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
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内存RAM
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内存RAM
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A-DATA Technology DQVE1908 512MB
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内存RAM
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A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3466C16-8GTZR 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
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Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
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Kingston 99U5474-010.A00LF 2GB
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Panram International Corporation M424051 4GB
内存RAM
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A-DATA Technology AD73I1C1674EV 4GB
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SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology CT102464BA160B.C16 8GB
Crucial Technology CT102464BA160B.C16 8GB
内存RAM