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Corsair CML8GX3M2A1866C9 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Corsair CML8GX3M2A1866C9 4GB vs Century Micro Inc. CENTURY JAPAN MEMORY 8GB

总分
star star star star star
Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分
star star star star star
Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

差异 规格 评论

差异

Corsair CML8GX3M2A1866C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB
报告一个错误
Century Micro Inc. CENTURY JAPAN MEMORY 8GB 需要考虑的原因
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 38
    左右 -6% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 14.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1866C9 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 36
  • 读取速度，GB/s
    14.1 left arrow 16.0
  • 写入速度，GB/s
    8.7 left arrow 13.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2228 left arrow 3313

Corsair CML8GX3M2A1866C9 4GB RAM的比较

Crucial Technology CT8G4DFS8213.C8FH1 8GB
Crucial Technology CB4GU2400.M8E 4GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Kingston 9965596-035.B00G 4GB
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Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
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Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Kingston X74R9W-MIE 8GB
Kingston X74R9W-MIE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
内存RAM
Kingston 9965525-058.A00LF 8GB
Kingston 9965525-058.A00LF 8GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
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Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMW128GX4M8C3200C16 16GB
Corsair CMW128GX4M8C3200C16 16GB
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Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
SK Hynix HMA81GU6CJR8N-UH 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
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Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3800C14-8GTZN 8GB
G Skill Intl F4-3800C14-8GTZN 8GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905624-018.A00G 8GB
Kingston 9905624-018.A00G 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Golden Empire CL16-18-18 D4-3000 16GB
Golden Empire CL16-18-18 D4-3000 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905624-018.A00G 8GB
Kingston 9905624-018.A00G 8GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Samsung M378A5244CB0-CVF 4GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
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Patriot Memory (PDP Systems) PSD44G240041 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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