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Samsung M378T5663QZ3-CF7 2GB
Golden Empire CL16-18-18 D4-3000 16GB

Samsung M378T5663QZ3-CF7 2GB vs Golden Empire CL16-18-18 D4-3000 16GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
Golden Empire CL16-18-18 D4-3000 16GB

Golden Empire CL16-18-18 D4-3000 16GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17
    测试中的平均数值
Golden Empire CL16-18-18 D4-3000 16GB 需要考虑的原因
Golden Empire CL16-18-18 D4-3000 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 56
    左右 -87% 更低的延时
  • 更快的写入速度，GB/s
    12.9 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
Golden Empire CL16-18-18 D4-3000 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 30
  • 读取速度，GB/s
    4,387.7 left arrow 17.0
  • 写入速度，GB/s
    1,813.5 left arrow 12.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    693 left arrow 3255

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

Golden Empire CL16-18-18 D4-3000 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905624-018.A00G 8GB
Kingston 9905624-018.A00G 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Corsair CMT16GX4M2K4000C19 8GB
Corsair CMT16GX4M2K4000C19 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C14-16GTZR 16GB
G Skill Intl F4-3200C14-16GTZR 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Kingston X74R9W-MIE 8GB
Kingston X74R9W-MIE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2133C15-8GRB 8GB
G Skill Intl F4-2133C15-8GRB 8GB
内存RAM
Kingston 9905471-054.A00LF 8GB
Kingston 9905471-054.A00LF 8GB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9905678-014.A00G 4GB
Kingston 9905678-014.A00G 4GB
内存RAM
Kingston 9905471-054.A00LF 8GB
Kingston 9905471-054.A00LF 8GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM