Corsair CML8GX3M2A1866C9 4GB vs Corsair CMW16GX4M2C3000C15 8GB

总分

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分

Corsair CMW16GX4M2C3000C15 8GB

Corsair CMW16GX4M2C3000C15 8GB

差异规格评论

差异

Corsair CML8GX3M2A1866C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB

报告一个错误

Corsair CMW16GX4M2C3000C15 8GB

需要考虑的原因
Corsair CMW16GX4M2C3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 -31% 更低的延时
更快的读取速度，GB/s

18.1 14.1

测试中的平均数值
更快的写入速度，GB/s

14.2 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1866C9 4GB

Corsair CMW16GX4M2C3000C15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 29
读取速度，GB/s

14.1 18.1
写入速度，GB/s

8.7 14.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2228 3485

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CML8GX3M2A1866C9 4GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

Samsung M393B5170FH0-CK0 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Kingston 9965596-002.B00G 4GB

Kingston 9965596-002.B00G 4GB