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Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
比较
Corsair CMSO4GX3M1C1600C11 4GB vs Crucial Technology CT4G4DFS824A.C8FBD1 4GB
总分
Corsair CMSO4GX3M1C1600C11 4GB
总分
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 3% 更低的延时
需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
报告一个错误
更快的读取速度,GB/s
16.6
12.6
测试中的平均数值
更快的写入速度,GB/s
13.4
8.3
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
29
读取速度,GB/s
12.6
16.6
写入速度,GB/s
8.3
13.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11
PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2112
3023
Corsair CMSO4GX3M1C1600C11 4GB RAM的比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX1600C9D3/4GX 4GB
Corsair CMD32GX4M2A2666C15 16GB
Kingston 9905403-061.A00LF 2GB
V-GEN D4M8GL26A8TS6 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A1K43DB2-CTD 8GB
A-DATA Technology VDQVE1B16 2GB
Samsung M378A2K43DB1-CVF 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMK16GX4M2K4400C19 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Samsung M393B2G70AH0-YH9 16GB
G Skill Intl F4-3200C16-32GVK 32GB
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Crucial Technology CT51264BA1339.C16F 4GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
PUSKILL DDR3 1600 8G 8GB
JUHOR JHD2666U1908JG 8GB
Kingston KVR16N11/8-SP 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
报告一个错误
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Bug description
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