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Corsair CMSO4GX3M1C1600C11 4GB
INTENSO 5641162 8GB

Corsair CMSO4GX3M1C1600C11 4GB vs INTENSO 5641162 8GB

总分
star star star star star
Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分
star star star star star
INTENSO 5641162 8GB

INTENSO 5641162 8GB

差异 规格 评论

差异

Corsair CMSO4GX3M1C1600C11 4GB 需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB
报告一个错误
INTENSO 5641162 8GB 需要考虑的原因
INTENSO 5641162 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Corsair CMSO4GX3M1C1600C11 4GB
INTENSO 5641162 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 23
  • 读取速度，GB/s
    12.6 left arrow 16.2
  • 写入速度，GB/s
    8.3 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2799

Corsair CMSO4GX3M1C1600C11 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1C1600C11 4GB

INTENSO 5641162 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
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Samsung M386A8K40CM2-CRC 64GB
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Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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A-DATA Technology DDR3 1333G 2GB
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Micron Technology 8ATF1G64HZ-3G2J1 8GB
内存RAM
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Kingston KF552C40-16 16GB
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SK Hynix HMA451R7AFR8N-UH 4GB
内存RAM
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Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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内存RAM
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Kingston 9905713-001.A00G 4GB
内存RAM