Corsair CMSO4GX3M1C1600C11 4GB vs Kingston 9905701-032.A00G 16GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分

Kingston 9905701-032.A00G 16GB

Kingston 9905701-032.A00G 16GB

差异规格评论

差异

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 65

左右 57% 更低的延时
更快的写入速度，GB/s

8.3 7.3

测试中的平均数值

Kingston 9905701-032.A00G 16GB

需要考虑的原因
Kingston 9905701-032.A00G 16GB

报告一个错误

更快的读取速度，GB/s

15.6 12.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Corsair CMSO4GX3M1C1600C11 4GB

Kingston 9905701-032.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 65
读取速度，GB/s

12.6 15.6
写入速度，GB/s

8.3 7.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 1820

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CE6 2GB

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SK Hynix HMAA4GU6AJR8N-VK 32GB

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Golden Empire CL16-18-18 D4-3200 8GB

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Kingston 99U5474-023.A00LF 4GB

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Corsair CMX8GX3M2A1600C11 4GB

G Skill Intl F4-3200C16-8GTZN 8GB

G Skill Intl F4-3200C16-8GTZN 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Roa Logic BV W4U2666CX1-8G 8GB

Roa Logic BV W4U2666CX1-8G 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston X2YH1K-MIE-NX 16GB

Kingston X2YH1K-MIE-NX 16GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Corsair CMK64GX4M2A2400C16 32GB

Corsair CMK64GX4M2A2400C16 32GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB