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Corsair CMSO4GX3M1C1600C11 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
比较
Corsair CMSO4GX3M1C1600C11 4GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB
总分
Corsair CMSO4GX3M1C1600C11 4GB
总分
Micron Technology 36ASF4G72PZ-2G1A1 32GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
37
左右 24% 更低的延时
更快的读取速度,GB/s
12.6
9.6
测试中的平均数值
更快的写入速度,GB/s
8.3
7.8
测试中的平均数值
需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1A1 32GB
报告一个错误
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Corsair CMSO4GX3M1C1600C11 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
37
读取速度,GB/s
12.6
9.6
写入速度,GB/s
8.3
7.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2112
2082
Corsair CMSO4GX3M1C1600C11 4GB RAM的比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KHX1600C9D3/8G 8GB
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Micron Technology 36ASF4G72PZ-2G1A1 32GB
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Corsair CMWB8G1L3200K16W4 8GB
Kingston 99U5471-020.A00LF 4GB
King Tiger Technology TMKU8G868-240U 8GB
Samsung M393B2G70BH0-CH9 16GB
Panram International Corporation W4U3200PS-16G 16GB
报告一个错误
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Bug description
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