Corsair CMSX4GX3M1A1600C9 4GB vs Chun Well Technology Holding Limited D4U0836181B 8GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Chun Well Technology Holding Limited D4U0836181B 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

Chun Well Technology Holding Limited D4U0836181B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0836181B 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 38

左右 -19% 更低的延时
更快的读取速度，GB/s

15.6 12.8

测试中的平均数值
更快的写入速度，GB/s

12.8 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Chun Well Technology Holding Limited D4U0836181B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 32
读取速度，GB/s

12.8 15.6
写入速度，GB/s

9.1 12.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 12 14 16 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2099 3279

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-090.A01LF 4GB

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SK Hynix HMA41GR7AFR4N-TF 8GB

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Kingston 9905471-006.A01LF 4GB

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Vasekey M378A1K43BB2-CPB 8GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

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Corsair CM4X16GC3600C18K2D 16GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

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Samsung M471A5143DB0-CPB 4GB

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