Corsair CMSX4GX3M1A1600C9 4GB vs Gloway International Co. Ltd. TYP4U3000E16082C 8GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 53

左右 28% 更低的延时

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYP4U3000E16082C 8GB

报告一个错误

更快的读取速度，GB/s

16.5 12.8

测试中的平均数值
更快的写入速度，GB/s

9.6 9.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 53
读取速度，GB/s

12.8 16.5
写入速度，GB/s

9.1 9.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2099 2301

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT325S6BFR8C-H9 2GB

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Avant Technology J641GU42J9266NL 8GB

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Samsung M471B5273EB0-CK0 4GB

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G Skill Intl F4-3000C16-16GSXFB 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMSO8GX4M1A2133C15 8GB

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SK Hynix HMA82GU6AFR8N-TF 16GB

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A-DATA Technology DDR2 800G 2GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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G Skill Intl F4-3600C17-8GTZKW 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB

Samsung M3 93T5750CZA-CE6 2GB

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Crucial Technology CT16G4DFD832A.C16FN 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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Corsair CMD16GX4M2B3733C17 8GB

Corsair CMD16GX4M2B3733C17 8GB