Corsair CMSX4GX3M1A1600C9 4GB vs Kingston KGTWW1-MIE 4GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 97

左右 61% 更低的延时
更快的写入速度，GB/s

9.1 6.7

测试中的平均数值

Kingston KGTWW1-MIE 4GB

需要考虑的原因
Kingston KGTWW1-MIE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 12.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Kingston KGTWW1-MIE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 97
读取速度，GB/s

12.8 15.5
写入速度，GB/s

9.1 6.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2099 1479

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 991988 (996988) 4GB

Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

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Samsung 1600 CL10 Series 8GB

Ramaxel Technology RMUA5110MH78HAF-2666 8GB

Ramaxel Technology RMUA5110MH78HAF-2666 8GB

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A-DATA Technology DDR2 800G 2GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Team Group Inc. Vulcan-1600 4GB

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G Skill Intl F4-3600C16-8GVKC 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

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Samsung M471A2K43EB1-CWE 16GB