Corsair CMSX4GX3M1A1600C9 4GB vs Kingston RB26D4U9D8MEH-16 16GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Kingston RB26D4U9D8MEH-16 16GB

Kingston RB26D4U9D8MEH-16 16GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

Kingston RB26D4U9D8MEH-16 16GB

需要考虑的原因
Kingston RB26D4U9D8MEH-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 38

左右 -23% 更低的延时
更快的读取速度，GB/s

17 12.8

测试中的平均数值
更快的写入速度，GB/s

15.6 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Kingston RB26D4U9D8MEH-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 31
读取速度，GB/s

12.8 17.0
写入速度，GB/s

9.1 15.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2099 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

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Crucial Technology CT4G4SFS8213.C8FDD2 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMD16GX4M4B3200C15 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905702-010.A00G 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-2400C17-8GSXK 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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EVGA 16G-D4-2800-MR 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB