Corsair CMSX8GX3M1A1600C1 8GB vs SK Hynix HMT41GS6BFR8A-PB 8GB

总分

Corsair CMSX8GX3M1A1600C1 8GB

Corsair CMSX8GX3M1A1600C1 8GB

总分

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

差异规格评论

差异

Corsair CMSX8GX3M1A1600C1 8GB

需要考虑的原因
Corsair CMSX8GX3M1A1600C1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 46

左右 37% 更低的延时
更快的写入速度，GB/s

8.4 8.0

测试中的平均数值

SK Hynix HMT41GS6BFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GS6BFR8A-PB 8GB

报告一个错误

规格

完整的技术规格清单

Corsair CMSX8GX3M1A1600C1 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

29 46
读取速度，GB/s

12.1 12.1
写入速度，GB/s

8.4 8.0
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 9 10 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2136 2088

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD AE34G1601U1 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

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Panram International Corporation PUD43000C164G2NJK 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston 99U5458-005.A00LF 4GB

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Kingston 99U5471-025.A00LF 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

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Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-2400C16-8GFX 8GB

G Skill Intl F4-2400C16-8GFX 8GB