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Corsair CMV4GX3M1B1600C11 4GB
Kingston KTD3KX-MIB 8GB

Corsair CMV4GX3M1B1600C11 4GB vs Kingston KTD3KX-MIB 8GB

总分
star star star star star
Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分
star star star star star
Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

差异 规格 评论

差异

Corsair CMV4GX3M1B1600C11 4GB 需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 26
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 6.9
    测试中的平均数值
Kingston KTD3KX-MIB 8GB 需要考虑的原因
Kingston KTD3KX-MIB 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Corsair CMV4GX3M1B1600C11 4GB
Kingston KTD3KX-MIB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 26
  • 读取速度，GB/s
    14.2 left arrow 13.0
  • 写入速度，GB/s
    8.1 left arrow 6.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2307 left arrow 1931

Corsair CMV4GX3M1B1600C11 4GB RAM的比较

Corsair CMV4GX3M1A1600C11 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Kingston KTD3KX-MIB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F3-1333C9-4GIS 4GB
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Crucial Technology BL16G26C16U4R.16FE 16GB
内存RAM