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Corsair CMV4GX3M1B1600C11 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB

Corsair CMV4GX3M1B1600C11 4GB vs Micron Technology 16ATF2G64AZ-2G3E1 16GB

总分
star star star star star
Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

差异 规格 评论

差异

Corsair CMV4GX3M1B1600C11 4GB 需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 42
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 13.3
    测试中的平均数值
Micron Technology 16ATF2G64AZ-2G3E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3E1 16GB
报告一个错误
  • 更快的写入速度，GB/s
    9.0 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Corsair CMV4GX3M1B1600C11 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 42
  • 读取速度，GB/s
    14.2 left arrow 13.3
  • 写入速度，GB/s
    8.1 left arrow 9.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2307 left arrow 2427

Corsair CMV4GX3M1B1600C11 4GB RAM的比较

Corsair CMV4GX3M1A1600C11 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3800C14-16GTZN 16GB
G Skill Intl F4-3800C14-16GTZN 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK64GX4M4A2400C16 16GB
Corsair CMK64GX4M4A2400C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J644GU44J9266NF 32GB
Avant Technology J644GU44J9266NF 32GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M393A2G40DBD-CP1???? 16GB
Samsung M393A2G40DBD-CP1???? 16GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
G Skill Intl F4-3000C16-16GSXFB 16GB
G Skill Intl F4-3000C16-16GSXFB 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK16GX4M4A2400C14 4GB
Corsair CMK16GX4M4A2400C14 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8G2666CL19 8GB
Micron Technology 8G2666CL19 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965604-008.D00G 16GB
Kingston 9965604-008.D00G 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK128GX4M8B3333C16 16GB
Corsair CMK128GX4M8B3333C16 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Mushkin 99[2/7/4]192[F/T] 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM