Corsair CMV4GX3M1B1600C11 4GB vs Micron Technology AFLD416EH1P 16GB

总分

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分

Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

差异规格评论

差异

Corsair CMV4GX3M1B1600C11 4GB

需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时
更快的读取速度，GB/s

14.2 13.7

测试中的平均数值
更快的写入速度，GB/s

8.1 6.9

测试中的平均数值

Micron Technology AFLD416EH1P 16GB

需要考虑的原因
Micron Technology AFLD416EH1P 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Corsair CMV4GX3M1B1600C11 4GB

Micron Technology AFLD416EH1P 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

14.2 13.7
写入速度，GB/s

8.1 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2307 2312

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-1866C8-8GTX 8GB

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Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB