Corsair CMX32GX3M4A1600C11 8GB vs G Skill Intl F4-2800C15-8GVSB 8GB

总分

Corsair CMX32GX3M4A1600C11 8GB

Corsair CMX32GX3M4A1600C11 8GB

总分

G Skill Intl F4-2800C15-8GVSB 8GB

G Skill Intl F4-2800C15-8GVSB 8GB

差异规格评论

差异

Corsair CMX32GX3M4A1600C11 8GB

需要考虑的原因
Corsair CMX32GX3M4A1600C11 8GB

报告一个错误

G Skill Intl F4-2800C15-8GVSB 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GVSB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 42

左右 -100% 更低的延时
更快的读取速度，GB/s

17.6 13.2

测试中的平均数值
更快的写入速度，GB/s

12.2 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMX32GX3M4A1600C11 8GB

G Skill Intl F4-2800C15-8GVSB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 21
读取速度，GB/s

13.2 17.6
写入速度，GB/s

8.3 12.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2348 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT102464BA160B.M16 8GB

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UMAX Technology D4-2133-4GB-512X8-L 4GB

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Crucial Technology CT51264BF160BJ.M8F 4GB

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Kingston KF2666C15S4/8G 8GB

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Essencore Limited IM4AGU88N24-FFFHA0 16GB

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SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Samsung M378A2G43AB3-CWE 16GB

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Samsung M471A5244CB0-CWE 4GB

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Patriot Memory (PDP Systems) 3866 C18 Series 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Netac Technology Co Ltd EKBLACK4083016A 8GB

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Corsair CM4X4GF2400C14K4 4GB

Corsair CM4X4GF2400C14K4 4GB