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Samsung M3 78T3354BZ0-CCC 256MB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.2
    测试中的平均数值
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 46
    左右 -77% 更低的延时
  • 更快的写入速度，GB/s
    12.7 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 3200
    左右 6 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 26
  • 读取速度，GB/s
    2,909.8 left arrow 16.2
  • 写入速度，GB/s
    1,519.2 left arrow 12.7
  • 内存带宽，mbps
    3200 left arrow 19200
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2728

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
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G Skill Intl F4-4800C18-8GTRG 8GB
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TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
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Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMK64GX4M2C3200C16 32GB
Corsair CMK64GX4M2C3200C16 32GB
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Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Essencore Limited KD4AGS88A-26N1600 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
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SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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Corsair CMR32GX4M4C3000C16 8GB
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Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Transcend Information JM3200HLG-8G 8GB
Transcend Information JM3200HLG-8G 8GB
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Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMW32GX4M4C3000C15 8GB
Corsair CMW32GX4M4C3000C15 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3000C16-8GTRS 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905702-150.A00G 8GB
Kingston 9905702-150.A00G 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
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