Corsair CMX4GX3M1A1333C9 4GB vs G Skill Intl F4-3200C16-8GSX 8GB

总分

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

总分

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

差异规格评论

差异

Corsair CMX4GX3M1A1333C9 4GB

需要考虑的原因
Corsair CMX4GX3M1A1333C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 55

左右 27% 更低的延时

G Skill Intl F4-3200C16-8GSX 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GSX 8GB

报告一个错误

更快的读取速度，GB/s

19.5 12.8

测试中的平均数值
更快的写入速度，GB/s

8.8 7.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M1A1333C9 4GB

G Skill Intl F4-3200C16-8GSX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 55
读取速度，GB/s

12.8 19.5
写入速度，GB/s

7.0 8.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2021 2274

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Ramaxel Technology RMSA3300MH78HBF-2666 16GB

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Corsair CMX4GX3M1A1333C9 4GB

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G Skill Intl F4-3200C16-8GSX 8GB

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Samsung M471B5173QH0-YK0 4GB

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Samsung SH5724G4UNC26P2-SC 32GB

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Samsung 1600 CL10 Series 8GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Mushkin 99[2/7/4]192F 4GB

Mushkin 99[2/7/4]192F 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

G Skill Intl F4-2666C15-16GVR 16GB

G Skill Intl F4-2666C15-16GVR 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB