Corsair CMX4GX3M2A1600C9 2GB vs Golden Empire CL16-18-18 D4-3400 4GB

总分

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分

Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB

差异规格评论

差异

Corsair CMX4GX3M2A1600C9 2GB

需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB

报告一个错误

Golden Empire CL16-18-18 D4-3400 4GB

需要考虑的原因
Golden Empire CL16-18-18 D4-3400 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 -46% 更低的延时
更快的读取速度，GB/s

14.4 13.9

测试中的平均数值
更快的写入速度，GB/s

11.2 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M2A1600C9 2GB

Golden Empire CL16-18-18 D4-3400 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 26
读取速度，GB/s

13.9 14.4
写入速度，GB/s

8.7 11.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2106 2846

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD824A.M16FH 16GB

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A-DATA Technology AO1P32NCSV1-BEWS 16GB

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Peak Electronics 256X64M-67E 2GB

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Crucial Technology BL32G36C16U4B.M16FB1 32GB

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Samsung M471A2K43BB1-CTD 16GB

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Crucial Technology BL16G32C16U4BL.M16FE 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

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A-DATA Technology DQVE1908 512MB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

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Kingston 9905664-010.A00G 4GB

Kingston 9905664-010.A00G 4GB