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Corsair CMX4GX3M2A1600C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
比较
Corsair CMX4GX3M2A1600C9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
总分
Corsair CMX4GX3M2A1600C9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
38
左右 -58% 更低的延时
更快的读取速度,GB/s
16
13.9
测试中的平均数值
更快的写入速度,GB/s
10.8
8.7
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMX4GX3M2A1600C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
38
24
读取速度,GB/s
13.9
16.0
写入速度,GB/s
8.7
10.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2106
2731
Corsair CMX4GX3M2A1600C9 2GB RAM的比较
Corsair CM3B4G2C1600L9 4GB
Corsair CMX4GX3M2B1600C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT451S6DFR8A-PB 4GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Samsung M378B1G73QH0-CK0 8GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix HMA81GS6AFR8N-UH 8GB
A-DATA Technology AD73I1C1674EV 4GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Kingston 9965516-430.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-4400C16-8GVK 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Golden Empire CL19-19-19 D4-2666 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905630-025.A00G 8GB
报告一个错误
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Bug description
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