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Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Corsair CMX4GX3M2A1600C9 2GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

总分
star star star star star
Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分
star star star star star
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

差异 规格 评论

差异

Corsair CMX4GX3M2A1600C9 2GB 需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 9.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 8.6
    测试中的平均数值
Micron Technology 18ASF1G72AZ-2G1B1 8GB 需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 38
    左右 -15% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 33
  • 读取速度，GB/s
    13.9 left arrow 9.6
  • 写入速度，GB/s
    8.7 left arrow 8.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2106 left arrow 2286

Corsair CMX4GX3M2A1600C9 2GB RAM的比较

Corsair CM3B4G2C1600L9 4GB
Corsair CMX4GX3M2B1600C9 2GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Kingston KHX3300C16D4/4GX 4GB
Kingston KHX3300C16D4/4GX 4GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Apacer Technology GD2.111881.002 4GB
Apacer Technology GD2.111881.002 4GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905665-014.A00G 4GB
Kingston 9905665-014.A00G 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston XRMWRN-MIE 16GB
Kingston XRMWRN-MIE 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9965589-017.D00G 8GB
Kingston 9965589-017.D00G 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology BL8G26C16U4B.8FE 8GB
Crucial Technology BL8G26C16U4B.8FE 8GB
内存RAM
Samsung M393B4G70EMB-CK0 32GB
Samsung M393B4G70EMB-CK0 32GB
G Skill Intl F4-4000C18-8GTZRB 8GB
G Skill Intl F4-4000C18-8GTZRB 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston ACR24D4U7D8MB-16 16GB
Kingston ACR24D4U7D8MB-16 16GB
内存RAM