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Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB

Corsair CMX4GX3M2A1600C9 2GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB

总分
star star star star star
Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

差异 规格 评论

差异

Corsair CMX4GX3M2A1600C9 2GB 需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 53
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 8.0
    测试中的平均数值
Micron Technology 9ASF51272PZ-2G3B1 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G3B1 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 53
  • 读取速度，GB/s
    13.9 left arrow 10.1
  • 写入速度，GB/s
    8.7 left arrow 8.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2106 left arrow 2319

Corsair CMX4GX3M2A1600C9 2GB RAM的比较

Corsair CM3B4G2C1600L9 4GB
Corsair CMX4GX3M2B1600C9 2GB

Micron Technology 9ASF51272PZ-2G3B1 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Samsung 1600 CL10 Series 8GB
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Micron Technology 18ADF2G72AZ-2G3A1 16GB
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Elpida EBJ21UE8BDF0-DJ-F 2GB
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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMT64GX4M8X3000C15 8GB
Corsair CMT64GX4M8X3000C15 8GB
内存RAM