Corsair CMX4GX3M2A1600C9 2GB vs Mushkin 99[2/7/4]205[F/T] 8GB

总分

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分

Mushkin 99[2/7/4]205[F/T] 8GB

Mushkin 99[2/7/4]205[F/T] 8GB

差异规格评论

差异

Corsair CMX4GX3M2A1600C9 2GB

需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB

报告一个错误

Mushkin 99[2/7/4]205[F/T] 8GB

需要考虑的原因
Mushkin 99[2/7/4]205[F/T] 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 38

左右 -100% 更低的延时
更快的读取速度，GB/s

19.3 13.9

测试中的平均数值
更快的写入速度，GB/s

13.8 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M2A1600C9 2GB

Mushkin 99[2/7/4]205[F/T] 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 19
读取速度，GB/s

13.9 19.3
写入速度，GB/s

8.7 13.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2106 3169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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AMD R534G1601U1S-UO 4GB

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Samsung M471A2K43EB1-CWE 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9905403-447.A00LF 4GB

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SK Hynix HMA81GU6DJR8N-VK 8GB

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Kingston 99U5584-005.A00LF 4GB

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G Skill Intl F4-3200C15-8GVR 8GB

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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CM4B8G2J2400A14K 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS16G4D26BFSE.16FD 16GB

Crucial Technology BLS16G4D26BFSE.16FD 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N