Corsair CMY16GX3M4A2133C8 4GB vs Heoriady M378A1K43BB2-CTD 8GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 64

左右 69% 更低的延时
更快的写入速度，GB/s

11.5 8.2

测试中的平均数值

Heoriady M378A1K43BB2-CTD 8GB

需要考虑的原因
Heoriady M378A1K43BB2-CTD 8GB

报告一个错误

更快的读取速度，GB/s

17.3 17

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Heoriady M378A1K43BB2-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 64
读取速度，GB/s

17.0 17.3
写入速度，GB/s

11.5 8.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3077 2067

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology M471A1K43BB1-CRC 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston KGTWW1-MIE 4GB

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G Skill Intl F4-4400C19-32GTRS 32GB

Samsung M393A1G40DB0-CPB 8GB

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Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston 9905678-023.A00G 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Smart Modular SF4642G8CK8IEHLSBG 16GB

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Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB