Corsair CMY16GX3M4A2133C8 4GB vs V-GEN D4H8GS24A8 8GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 92

左右 78% 更低的延时
更快的读取速度，GB/s

17 15.1

测试中的平均数值
更快的写入速度，GB/s

11.5 8.2

测试中的平均数值

V-GEN D4H8GS24A8 8GB

需要考虑的原因
V-GEN D4H8GS24A8 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

V-GEN D4H8GS24A8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 92
读取速度，GB/s

17.0 15.1
写入速度，GB/s

11.5 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3077 1640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology BLS8G4D26BFSC.16FE 8GB

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Samsung 1600 CL10 Series 8GB

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AMD R5S38G1601U2S 8GB

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A-DATA Technology DQVE1908 512MB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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DSL Memory D4SS12082SH21A-A 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

G Skill Intl F4-2800C15-4GVR 4GB

G Skill Intl F4-2800C15-4GVR 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB