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Corsair CMY8GX3M2A2133C8 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB
比较
Corsair CMY8GX3M2A2133C8 4GB vs Chun Well Technology Holding Limited D4U0832160B 8GB
总分
Corsair CMY8GX3M2A2133C8 4GB
总分
Chun Well Technology Holding Limited D4U0832160B 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMY8GX3M2A2133C8 4GB
报告一个错误
低于PassMark测试中的延时,ns
19
32
左右 41% 更低的延时
需要考虑的原因
Chun Well Technology Holding Limited D4U0832160B 8GB
报告一个错误
更快的读取速度,GB/s
20.5
18.1
测试中的平均数值
更快的写入速度,GB/s
14.5
11.9
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CMY8GX3M2A2133C8 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
19
32
读取速度,GB/s
18.1
20.5
写入速度,GB/s
11.9
14.5
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3040
3379
Corsair CMY8GX3M2A2133C8 4GB RAM的比较
Corsair CMZ8GX3M2A1600C8 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK16GX4M1A2400C16 16GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3600C18-32GTRS 32GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Kingston 99U5474-022.A00LF 2GB
Corsair CMK32GX4M2L3000C15 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905713-019.A00G 4GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Kingston 99U5428-046.A00LF 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
报告一个错误
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Bug description
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