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Corsair CMY8GX3M2A2133C8 4GB
Micron Technology 8KTF51264AZ-1G9P1 4GB

Corsair CMY8GX3M2A2133C8 4GB vs Micron Technology 8KTF51264AZ-1G9P1 4GB

总分
star star star star star
Corsair CMY8GX3M2A2133C8 4GB

Corsair CMY8GX3M2A2133C8 4GB

总分
star star star star star
Micron Technology 8KTF51264AZ-1G9P1 4GB

Micron Technology 8KTF51264AZ-1G9P1 4GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2133C8 4GB 需要考虑的原因
Corsair CMY8GX3M2A2133C8 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 27
    左右 30% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 9.6
    测试中的平均数值
Micron Technology 8KTF51264AZ-1G9P1 4GB 需要考虑的原因
Micron Technology 8KTF51264AZ-1G9P1 4GB
报告一个错误
  • 更高的内存带宽，mbps
    14900 left arrow 10600
    左右 1.41 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2133C8 4GB
Micron Technology 8KTF51264AZ-1G9P1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    19 left arrow 27
  • 读取速度，GB/s
    18.1 left arrow 15.0
  • 写入速度，GB/s
    11.9 left arrow 9.6
  • 内存带宽，mbps
    10600 left arrow 14900
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-10-9-28 / 1866 MHz
  • 排名PassMark (越多越好)
    3040 left arrow 2306

Corsair CMY8GX3M2A2133C8 4GB RAM的比较

Corsair CMZ8GX3M2A1600C8 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

Micron Technology 8KTF51264AZ-1G9P1 4GB RAM的比较

Samsung M391B5673EH1-CH9 2GB
RAM Latency Calculator
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