Corsair CMY8GX3M2A2666C10 4GB vs SK Hynix HMA82GR7MFR4N-UH 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

SK Hynix HMA82GR7MFR4N-UH 16GB

SK Hynix HMA82GR7MFR4N-UH 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 52

左右 67% 更低的延时
更快的读取速度，GB/s

22.8 10.4

测试中的平均数值
更快的写入速度，GB/s

15.4 7.6

测试中的平均数值

SK Hynix HMA82GR7MFR4N-UH 16GB

需要考虑的原因
SK Hynix HMA82GR7MFR4N-UH 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

SK Hynix HMA82GR7MFR4N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 52
读取速度，GB/s

22.8 10.4
写入速度，GB/s

15.4 7.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3391 2384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 18ADF2G72AZ-2G3A1 16GB

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Kingston 9905403-444.A00LF 4GB

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Micron Technology 16ATF4G64AZ-3G2E1 32GB

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AMD R538G1601U2S 8GB

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Corsair CMK16GX4M2A2800C16 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M393B1G70BH0-YK0 8GB

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Kingston 9905471-002.A00LF 2GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Crucial Technology CT4G4SFS824A.M8FB 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Neo Forza GKE160SO204808-3200 16GB

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Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

Kingston 99P5474-014.A00LF 4GB

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G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Avant Technology W642GU42J9266N8 16GB

Avant Technology W642GU42J9266N8 16GB