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Samsung M3 93T5750CZA-CE6 2GB
Corsair CMH16GX4M2D3600C18 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMH16GX4M2D3600C18 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Corsair CMH16GX4M2D3600C18 8GB

Corsair CMH16GX4M2D3600C18 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 16.0
    测试中的平均数值
Corsair CMH16GX4M2D3600C18 8GB 需要考虑的原因
Corsair CMH16GX4M2D3600C18 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 77
    左右 -185% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMH16GX4M2D3600C18 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 27
  • 读取速度，GB/s
    3,405.2 left arrow 19.4
  • 写入速度，GB/s
    2,622.0 left arrow 16.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3646

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Corsair CMH16GX4M2D3600C18 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905665-023.A00G 4GB
Kingston 9905665-023.A00G 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMH16GX4M2D3600C18 8GB
Corsair CMH16GX4M2D3600C18 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
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Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KHX3300C16D4/4GX 4GB
Kingston KHX3300C16D4/4GX 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Avant Technology J642GU42J9266N4 16GB
Avant Technology J642GU42J9266N4 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-4000C18-8GTZRB 8GB
G Skill Intl F4-4000C18-8GTZRB 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G6672 2GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Panram International Corporation W4U2666P-8G 8GB
Panram International Corporation W4U2666P-8G 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Mushkin 99[2/7/4]200[F/T] 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Asgard VMA45UG-MIC1U22T2 8GB
Asgard VMA45UG-MIC1U22T2 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
内存RAM