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Corsair CMZ16GX3M2A1866C9 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Corsair CMZ16GX3M2A1866C9 8GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

总分
star star star star star
Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分
star star star star star
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

差异 规格 评论

差异

Corsair CMZ16GX3M2A1866C9 8GB 需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB
报告一个错误
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB 需要考虑的原因
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 39
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMZ16GX3M2A1866C9 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 30
  • 读取速度，GB/s
    14.0 left arrow 17.6
  • 写入速度，GB/s
    9.0 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2489 left arrow 3473

Corsair CMZ16GX3M2A1866C9 8GB RAM的比较

Kingston KHX1600C10D3/8GXF 8GB
Corsair CMZ32GX3M4X1600C10 8GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB RAM的比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CM4X32GC3200C16K2E 32GB
Corsair CM4X32GC3200C16K2E 32GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
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Samsung M378A5244CB0-CTD 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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G Skill Intl F4-3333C16-16GTZSW 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-2666C18-4GFX 4GB
G Skill Intl F4-2666C18-4GFX 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston KKN2NM-MIE 4GB
Kingston KKN2NM-MIE 4GB
内存RAM
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Samsung M4 70T5663QZ3-CF7 2GB
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Asgard VMA45UG-MEC1U2AW1 8GB
内存RAM
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Corsair VS1GB800D2 1GB
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Crucial Technology CT16G4SFRA266.M16FRS 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMK16GX4M4A2400C14 4GB
Corsair CMK16GX4M4A2400C14 4GB
内存RAM