Corsair CMZ16GX3M2A1866C9 8GB vs G Skill Intl F4-3200C16-4GTZ 4GB

总分

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB

报告一个错误

G Skill Intl F4-3200C16-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 39

左右 -86% 更低的延时
更快的读取速度，GB/s

18 14

测试中的平均数值
更快的写入速度，GB/s

13.8 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A1866C9 8GB

G Skill Intl F4-3200C16-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 21
读取速度，GB/s

14.0 18.0
写入速度，GB/s

9.0 13.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2489 3034

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston CBD32D4S2D8HD-16 16GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Apacer Technology 75.A73AA.G03 2GB

Apacer Technology 75.A73AA.G03 2GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB