Corsair CMZ16GX3M2A1866C9 8GB vs G Skill Intl F4-3400C16-4GRBD 4GB

总分

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分

G Skill Intl F4-3400C16-4GRBD 4GB

G Skill Intl F4-3400C16-4GRBD 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB

报告一个错误

G Skill Intl F4-3400C16-4GRBD 4GB

需要考虑的原因
G Skill Intl F4-3400C16-4GRBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 -30% 更低的延时
更快的读取速度，GB/s

16.4 14

测试中的平均数值
更快的写入速度，GB/s

15.0 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A1866C9 8GB

G Skill Intl F4-3400C16-4GRBD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 30
读取速度，GB/s

14.0 16.4
写入速度，GB/s

9.0 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2489 3372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3400C16-8GTZKW 8GB

G Skill Intl F4-3400C16-8GTZKW 8GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

Corsair CMWX16GC3200C16W2E 16GB

Corsair CMWX16GC3200C16W2E 16GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology 8G4US2400.M8B1 8GB

Crucial Technology 8G4US2400.M8B1 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB

OCZ OCZ2P8002G 2GB

OCZ OCZ2P8002G 2GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N