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Corsair CMZ16GX3M2A1866C9 8GB
Samsung M471A1K43DB1-CWE 8GB

Corsair CMZ16GX3M2A1866C9 8GB vs Samsung M471A1K43DB1-CWE 8GB

总分
star star star star star
Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

差异 规格 评论

差异

Corsair CMZ16GX3M2A1866C9 8GB 需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB
报告一个错误
Samsung M471A1K43DB1-CWE 8GB 需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 39
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Corsair CMZ16GX3M2A1866C9 8GB
Samsung M471A1K43DB1-CWE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 33
  • 读取速度，GB/s
    14.0 left arrow 16.1
  • 写入速度，GB/s
    9.0 left arrow 13.0
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2489 left arrow 2987

Corsair CMZ16GX3M2A1866C9 8GB RAM的比较

Kingston KHX1600C10D3/8GXF 8GB
Corsair CMZ32GX3M4X1600C10 8GB

Samsung M471A1K43DB1-CWE 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Kingston 9905678-173.A00G 8GB
Kingston 9905678-173.A00G 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Kingston 9905743-023.A00G 8GB
Kingston 9905743-023.A00G 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 8G2666CL19 8GB
Micron Technology 8G2666CL19 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston MSI24D4S7D8MH-16 16GB
Kingston MSI24D4S7D8MH-16 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Essencore Limited KD48GS481-26N1600 8GB
Essencore Limited KD48GS481-26N1600 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3600C18-16GTRS 16GB
G Skill Intl F4-3600C18-16GTRS 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-4GVR 4GB
G Skill Intl F4-3000C15-4GVR 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMK32GX4M4B3866C18 8GB
Corsair CMK32GX4M4B3866C18 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM