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Peak Electronics 256X64M-67E 2GB
Kingston 9905743-023.A00G 8GB

Peak Electronics 256X64M-67E 2GB vs Kingston 9905743-023.A00G 8GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
Kingston 9905743-023.A00G 8GB

Kingston 9905743-023.A00G 8GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 14.7
    测试中的平均数值
Kingston 9905743-023.A00G 8GB 需要考虑的原因
Kingston 9905743-023.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 39
    左右 -3% 更低的延时
  • 更快的写入速度，GB/s
    12.7 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Kingston 9905743-023.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 38
  • 读取速度，GB/s
    5,022.9 left arrow 14.7
  • 写入速度，GB/s
    1,597.0 left arrow 12.7
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    753 left arrow 2725

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

Kingston 9905743-023.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Peak Electronics 256X64M-67E 2GB
Kingston 9905743-023.A00G 8GB
Kingston 9905743-023.A00G 8GB
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Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
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Corsair CMR16GX4M2Z2933C16 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
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内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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G Skill Intl F4-2400C17-8GIS 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM