Corsair CMZ16GX3M2A1866C9 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 56

左右 30% 更低的延时

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

报告一个错误

更快的读取速度，GB/s

20.1 14

测试中的平均数值
更快的写入速度，GB/s

10.5 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A1866C9 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 56
读取速度，GB/s

14.0 20.1
写入速度，GB/s

9.0 10.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2489 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston 9905678-044.A00G 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

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Corsair CMT64GX4M4C3466C16 16GB