Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 12

测试中的平均数值

Crucial Technology CT4G4DFS824A.M8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 59

左右 -146% 更低的延时
更快的写入速度，GB/s

6.6 2,123.3

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 24
读取速度，GB/s

4,833.8 12.0
写入速度，GB/s

2,123.3 6.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 1433

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SMS4TDC8C1K0446FCG 8GB

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SK Hynix HMA451S6AFR8N-TF 4GB

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Kingston ACR512X64D3S13C9G 4GB

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Kingston 9905711-017.A00G 4GB

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Kingston 99U5429-014.A00LF 4GB

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Super Talent F21UB8GS 8GB

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Crucial Technology CB8GS2400.C8JT 8GB

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Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Kingston 9965600-005.A00G 16GB

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Kingston 9965525-140.A00LF 8GB

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Samsung M378A1K43CB2-CTD 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Apacer Technology 78.D2GF2.AU30B 16GB

Apacer Technology 78.D2GF2.AU30B 16GB