Corsair CMZ16GX3M2A2400C10 8GB vs A-DATA Technology AO1P24HC8T1-BSFS 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

A-DATA Technology AO1P24HC8T1-BSFS 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

A-DATA Technology AO1P24HC8T1-BSFS 8GB

需要考虑的原因
A-DATA Technology AO1P24HC8T1-BSFS 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 -12% 更低的延时
更快的读取速度，GB/s

14.5 11.4

测试中的平均数值
更快的写入速度，GB/s

9.1 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 33
读取速度，GB/s

11.4 14.5
写入速度，GB/s

7.4 9.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 2383

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR16D3LS1NGG/2G 2GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Crucial Technology BLS8G4D26BFSC.16FD2 8GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Samsung M471A1K43BB1-CTD 8GB

Samsung M471A1K43BB1-CTD 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Corsair CMD32GX4M4A2400C12 8GB

Corsair CMD32GX4M4A2400C12 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KTD3KX-MIB 8GB

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Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB