RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PNY Electronics PNY 2GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB

PNY Electronics PNY 2GB vs A-DATA Technology AO1P24HC8T1-BSFS 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
A-DATA Technology AO1P24HC8T1-BSFS 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 18% 更低的延时
A-DATA Technology AO1P24HC8T1-BSFS 8GB 需要考虑的原因
A-DATA Technology AO1P24HC8T1-BSFS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.5 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 33
  • 读取速度，GB/s
    13.8 left arrow 14.5
  • 写入速度，GB/s
    8.4 left arrow 9.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2383

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]199[F/T] 8GB
Mushkin 99[2/7/4]199[F/T] 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology CB8GS2400.C8ET 8GB
Crucial Technology CB8GS2400.C8ET 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CMU16GX4M2D3200C16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA82GS6AFRFR-UH 16GB
SK Hynix HMA82GS6AFRFR-UH 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK64GX4M4B3466C16 16GB
Corsair CMK64GX4M4B3466C16 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Kingston KHX2133C13S4/16G 16GB
Kingston KHX2133C13S4/16G 16GB
内存RAM