Corsair CMZ16GX3M2A2400C10 8GB vs Crucial Technology CT8G4DFD8213.C16FBR2 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FBR2 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 37

左右 -9% 更低的延时
更快的读取速度，GB/s

14.8 11.4

测试中的平均数值
更快的写入速度，GB/s

11.0 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 34
读取速度，GB/s

11.4 14.8
写入速度，GB/s

7.4 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2652

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology CB8GU2666.C8ET 8GB

Crucial Technology CB8GU2666.C8ET 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BL8G30C15U4R.8FE 8GB

Crucial Technology BL8G30C15U4R.8FE 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Essencore Limited IM44GU48N24-FFFHA0 4GB

Essencore Limited IM44GU48N24-FFFHA0 4GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CMW32GX4M2D3600C18 16GB

Corsair CMW32GX4M2D3600C18 16GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Essencore Limited KD48GS88J-26N1900 8GB

Essencore Limited KD48GS88J-26N1900 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-4000C19-8GTZSW 8GB

G Skill Intl F4-4000C19-8GTZSW 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB