Corsair CMZ16GX3M2A2400C10 8GB vs Crucial Technology CT8G4SFS8213.C8FBR1 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8213.C8FBR1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 -42% 更低的延时
更快的读取速度，GB/s

13.9 11.4

测试中的平均数值
更快的写入速度，GB/s

8.8 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 26
读取速度，GB/s

11.4 13.9
写入速度，GB/s

7.4 8.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2291

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CMK16GX4M2K4133C19 8GB

Corsair CMK16GX4M2K4133C19 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Apacer Technology 78.B1GM3.AF00B 4GB

Apacer Technology 78.B1GM3.AF00B 4GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Apacer Technology 78.DAGNN.4030B 16GB

Apacer Technology 78.DAGNN.4030B 16GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Avant Technology J642GU44J2320ND 16GB

Avant Technology J642GU44J2320ND 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 9905678-007.A00G 8GB

Kingston 9905678-007.A00G 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-2400C15-4GRK 4GB

G Skill Intl F4-2400C15-4GRK 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Crucial Technology BLS8G4D240FSB.16FBD2 8GB

Crucial Technology BLS8G4D240FSB.16FBD2 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CM4X16GF3200C22S2 16GB

Corsair CM4X16GF3200C22S2 16GB

Samsung M392B1K70CM0-CH9 8GB

Samsung M392B1K70CM0-CH9 8GB

Kingston 9905678-110.A00G 8GB

Kingston 9905678-110.A00G 8GB

Kingston 9965669-018.A00G 16GB

Kingston 9965669-018.A00G 16GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB