Corsair CMZ16GX3M2A2400C10 8GB vs Crucial Technology CT8G4SFS8213.C8FH1 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Crucial Technology CT8G4SFS8213.C8FH1 8GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

更快的写入速度，GB/s

7.4 5.9

测试中的平均数值

Crucial Technology CT8G4SFS8213.C8FH1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8213.C8FH1 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 37

左右 -23% 更低的延时
更快的读取速度，GB/s

12.4 11.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 30
读取速度，GB/s

11.4 12.4
写入速度，GB/s

7.4 5.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 1758

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CMD16GX3M2A1866C9 8GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Samsung M393B5270CH0-CH9 4GB

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Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Corsair CMR32GX4M4C3600C18 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kingston 9965525-155.A00LF 8GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston KHX3000C15D4/8GX 8GB

Kingston KHX3000C15D4/8GX 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB