Corsair CMZ16GX3M2A2400C10 8GB vs G Skill Intl F4-2666C18-4GRS 4GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

G Skill Intl F4-2666C18-4GRS 4GB

需要考虑的原因
G Skill Intl F4-2666C18-4GRS 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 37

左右 -19% 更低的延时
更快的读取速度，GB/s

14.9 11.4

测试中的平均数值
更快的写入速度，GB/s

11.4 7.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-2666C18-4GRS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 31
读取速度，GB/s

11.4 14.9
写入速度，GB/s

7.4 11.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1683 2330

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

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Micron Technology 16ATF2G64HZ-3G2E1 16GB

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Kingston 9965525-140.A00LF 8GB

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Micron Technology 18ASF1G72AZ-2G1B1 8GB

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Ramaxel Technology RMUA5200MR78HAF-3200 8GB

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Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston ACR16D3LS1NGG/2G 2GB

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB