Corsair CMZ16GX3M2A2400C10 8GB vs G Skill Intl F4-2800C16-4GRK 4GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

G Skill Intl F4-2800C16-4GRK 4GB

G Skill Intl F4-2800C16-4GRK 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 38

左右 3% 更低的延时

G Skill Intl F4-2800C16-4GRK 4GB

需要考虑的原因
G Skill Intl F4-2800C16-4GRK 4GB

报告一个错误

更快的读取速度，GB/s

14.4 11.4

测试中的平均数值
更快的写入速度，GB/s

11.5 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-2800C16-4GRK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 38
读取速度，GB/s

11.4 14.4
写入速度，GB/s

7.4 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2856

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-16GTZSK 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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G Skill Intl F4-3600C15-8GTZ 8GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Samsung M391A2K43BB1-CPB 16GB

Samsung M391A2K43BB1-CPB 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-4133C17-8GTZR 8GB

G Skill Intl F4-4133C17-8GTZR 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Kingston 9905622-057.A00G 4GB

Kingston 9905622-057.A00G 4GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB