Corsair CMZ16GX3M2A2400C10 8GB vs Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 40

左右 8% 更低的延时

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

需要考虑的原因
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

报告一个错误

更快的读取速度，GB/s

13.4 11.4

测试中的平均数值
更快的写入速度，GB/s

11.3 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 40
读取速度，GB/s

11.4 13.4
写入速度，GB/s

7.4 11.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 2362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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Samsung M4 70T5663QZ3-CF7 2GB

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Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMH16GX4M2Z3600C18 8GB

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G Skill Intl F4-4000C15-8GTZR 8GB