Corsair CMZ16GX3M2A2400C10 8GB vs ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

需要考虑的原因
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 37

左右 -54% 更低的延时
更快的读取速度，GB/s

15.4 11.4

测试中的平均数值
更快的写入速度，GB/s

10.5 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 24
读取速度，GB/s

11.4 15.4
写入速度，GB/s

7.4 10.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 2440

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL32G32C16U4BL.M16FB 32GB

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Samsung M471B5273CH0-CH9 4GB

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Crucial Technology BL8G36C16U4W.M8FE1 8GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3000C16-8GSXKB 8GB

G Skill Intl F4-3000C16-8GSXKB 8GB