Corsair CMZ16GX3M2A2400C10 8GB vs Kingston 9965589-008.D01G 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Kingston 9965589-008.D01G 8GB

Kingston 9965589-008.D01G 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

更快的读取速度，GB/s

11.4 10

测试中的平均数值

Kingston 9965589-008.D01G 8GB

需要考虑的原因
Kingston 9965589-008.D01G 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 37

左右 -3% 更低的延时
更快的写入速度，GB/s

7.5 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Kingston 9965589-008.D01G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 36
读取速度，GB/s

11.4 10.0
写入速度，GB/s

7.4 7.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2037

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF2G64HZ-3G2E1 16GB

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Crucial Technology CT16G4SFD8213.C16FAD 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Crucial Technology BLT4G4D30AETA.K8FE 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

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Corsair CMK32GX5M2B5200C40 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

AMD R744G2606U1S 4GB

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Kingston 9965433-034.A00LF 4GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix HMA84GL7AMR4N-TF 32GB

SK Hynix HMA84GL7AMR4N-TF 32GB