Corsair CMZ16GX3M2A2400C10 8GB vs Patriot Memory (PDP Systems) 3600 C17 Series 4GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 3600 C17 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 -12% 更低的延时
更快的读取速度，GB/s

17.5 11.4

测试中的平均数值
更快的写入速度，GB/s

15.8 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 33
读取速度，GB/s

11.4 17.5
写入速度，GB/s

7.4 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 3482

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-010.A00LF 2GB

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Crucial Technology CT8G4DFD8213.C16FBR2 8GB

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Samsung M393B5170FH0-YH9 4GB

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Samsung M378B5673FH0-CH9 2GB

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Crucial Technology CT4G4SFS8266.M8FE 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

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Kingston 9905624-051.A00G 8GB

Kingston 9905624-051.A00G 8GB