Corsair CMZ16GX3M2A2400C10 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 37

左右 -68% 更低的延时
更快的读取速度，GB/s

17.7 11.4

测试中的平均数值
更快的写入速度，GB/s

12.7 7.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 22
读取速度，GB/s

11.4 17.7
写入速度，GB/s

7.4 12.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1683 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA41GU6AFR8N-TF 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMK8GX4M2A2400C16 4GB

Kingston KF552C40-16 16GB

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Golden Empire CL14-14-14 D4-2400 16GB

Golden Empire CL14-14-14 D4-2400 16GB

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

Team Group Inc. DDR4 3000 4GB

Team Group Inc. DDR4 3000 4GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Avant Technology W6451U67J5213NB 4GB

Avant Technology W6451U67J5213NB 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Corsair CMK64GX4M4B3333C16 16GB

Corsair CMK64GX4M4B3333C16 16GB